| PART |
Description |
Maker |
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| HN1B01FU HN1B01FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
TOSHIBA
|
| 2SC3421 E000843 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| HN1B01F E001967 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4210 2SC421003 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC332407 2SC3324 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01F07 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
